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Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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6" nitride furnace (Si<sub>3</sub>N<sub>4</sub>):
6" nitride furnace (Si<sub>3</sub>N<sub>4</sub>):
*Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): 30-33 sccm
*Dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>): 30-33 sccm
*Ammonia (NH<math>_3</math>): 100-120 sccm
*Ammonia (NH<sub>3</sub>): 100-120 sccm
*The gas flows depend on whether nitride is deposited on 4" or 6" wafers
*The gas flows depend on whether nitride is deposited on 4" or 6" wafers
4" nitride furnace (SRN):
4" nitride furnace (SRN):
*Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): 80 sccm
*Dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>): 80 sccm
*Ammonia (NH<math>_3</math>): 20 sccm
*Ammonia (NH<sub>3</sub>): 20 sccm
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
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