Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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[[image:IBE magnetic stack A3-13.jpg|300x300px|thumb|center|Etched magnetic stack with pool structure transfer. Chosen etch parameters result in severe trenching]] | [[image:IBE magnetic stack A3-13.jpg|300x300px|thumb|center|Etched magnetic stack with pool structure transfer. Chosen etch parameters result in severe trenching]] | ||
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===Endpoint detection with SIMS=== | |||
[[image:IBE magnetic stack A19-13.jpg|300x300px|thumb|center|Magnetic stack of Ta/MnIr/NiFe/Ta/Tao/Ta/MnIr/NiFe/Ta. Redeposition of etched material at photo resist. Profile ~78°]] | |||
End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min. | |||
Resist stripping can be hard due to burned resist, to remedy this try to lover the current; this will though chance the sidewall angle. For help, discussion and further info please contact Kristian Hagsted Rasmussen. | |||