Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
| Line 43: | Line 43: | ||
{| border="1" cellspacing="1" cellpadding="2" | {| border="1" cellspacing="1" cellpadding="2" | ||
! | ! | ||
[[image:IBE | [[image:IBE magnetic stack A19-13.jpg|300x300px|thumb|center|Magnetic stack of Ta/MnIr/NiFe/Ta/Tao/Ta/MnIr/NiFe/Ta. Redeposition of etched material at photo resist. Profile 78°]] | ||
! | ! | ||
[[image:IBE acceptance Ti S10-5.jpg|300x300px|thumb|center|Ti s10-5: 270nm deep - 300nm line. All zep has gone. Profile: ~65 dg.]] | [[image:IBE acceptance Ti S10-5.jpg|300x300px|thumb|center|Ti s10-5: 270nm deep - 300nm line. All zep has gone. Profile: ~65 dg.]] | ||