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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions

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danchip, nanotech
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Khr (talk | contribs)
danchip, nanotech
95 edits
Line 9: Line 9:
|-
|-
|Neutalizer current [mA]
|Neutalizer current [mA]
|550
|450
|-
|-
|RF Power [W]
|RF Power [W]
|1200
|800
|-
|-
|Beam current [mA]
|Beam current [mA]
|500
|400
|-
|-
|Beam voltage [V]
|Beam voltage [V]
|600
|500
|-
|-
|Beam accelerator voltage
|Beam accelerator voltage
|400
|500
|-
|-
|Ar flow to neutralizer [sccm]
|Ar flow to neutralizer [sccm]
|6.0
|5.0
|-
|-
|Ar flow to beam [sccm]
|Ar flow to beam [sccm]
|6.0
|10.0
|-
|-
|Rotation speed [rpm]
|Rotation speed [rpm]
Line 33: Line 33:
|-
|-
|Stage angle [degrees]
|Stage angle [degrees]
|20
|5
|-
|Helium backside cooling [Torr]|37.5
|-
|-
|}
|}


===Some SEM profile images of the etched Ti===
===Some SEM profile images of the etched Ti===
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