Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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*Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub> | *Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub> | ||
Can be doped with boron, phosphorus or germanium | Can be doped with boron, phosphorus or germanium | ||
| | | Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used) | ||
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|Film thickness | |Film thickness | ||
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*~40nm - 30µm | *~40nm - 30µm | ||
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*Thin layers (up to 300-400 nm) | |||
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*1-3 4" wafers or 1 6" wafer or many smaller chips per run | *1-3 4" wafers or 1 6" wafer or many smaller chips per run | ||
*deposition on one side of the substrate | *deposition on one side of the substrate | ||
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*1-12 4" wafers or 1-4 6" wafer or many smaller chips per run | |||
*Deposition time for 1 and 3 wafers are the same | |||
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