Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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! AOE | ! AOE | ||
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| | |General description | ||
| | | | ||
*Isotropic etch | *Isotropic etch | ||
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*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters. | *Typically 200-600 nm/min can be increased or decreased by using other recipe parameters. | ||
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| | |Batch size | ||
| | | | ||
*25 wafers at a time | *1-25 wafers at a time | ||
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*1 wafer at a time | *1 wafer at a time | ||
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*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer) | *6" or 4" depending on the setup (smaller pieces if you have a carrier wafer) | ||
|- | |||
|Allowed materials | |||
| | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
| | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
*Aluminium | |||
*Chromium (ONLY RIE2!) | |||
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!) | |||
| | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
*Aluminium | |||
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