Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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|One wafer at a time | |One wafer at a time | ||
|One wafer at a time | |One wafer at a time | ||
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|Allowed materials | |||
| | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Other materials (only in "Fumehood KOH") | |||
| | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
| | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
*Aluminium | |||
*Chromium (ONLY RIE2!) | |||
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!) | |||
| | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
*Aluminium | |||
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