Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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|One wafer at a time | |One wafer at a time | ||
|One wafer at a time | |One wafer at a time | ||
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|Allowed materials | |||
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*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Other materials (only in "Fumehood KOH") | |||
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*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
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*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
*Aluminium | |||
*Chromium (ONLY RIE2!) | |||
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!) | |||
| | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
*Aluminium | |||
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Revision as of 16:27, 19 November 2007
Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
Dry etches:
Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon
KOH | PolySilicon etch | RIE | ASE | |
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What is it good for: |
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Possible masking materials: |
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Etch rate |
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<40nm/min to >600nm/min depending on recipe parameters and mask design | <130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. |
Size of substrate |
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4" in our standard bath | 4" (or smaller with carrier) | 6" (when it is set up for 6") and 4" (or smaller if you have a carrier) |
Batch size |
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25 wafers at a time | One wafer at a time | One wafer at a time |
Allowed materials |
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