Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions

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| [[#Results of acceptance test no. 8|8]]||Stitching of large area||Stitching 4 mm x 4 mm on same sample as in 7. The area consists of many closed packed honey comb formed membranes.||Membrane bow must the same as on 7 within 2%

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| [[#Results of acceptance test no. 9|9]]||Narrow trenches and holes ||Sample material: Patterned silicon substrate <br/> 2.5 µm wide trench in silicon with a depth of 20 µm||Depth 20±2 µm

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| [[#Results of acceptance test no. 10|10]]||Film thickness measurement of transparent thin film||Transparent thin film thickness of 28 nm SiO2 on Si||SiO2 thickness 28±1 nm  

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| [[#Results of acceptance test no. 11|11]]||Measurements of multiple stacks||120 nm nitride on 110 nm oxide on a silicon substrate||Within ±2% on each layer from an ellipsometer measurement.  

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| [[#Results of acceptance test no. 12|12]]||Film thickness measurements of transparent films on small structure||Sample material: Si with 1.5 µm patterned AZ-resist <br/> Measure thickness of AZ-resist on pillars of 50 µm in diameter||Within ±1% from a standard profiler measurement.

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| [[#Results of acceptance test no. 13|13]]||Roughness repeatability||Sample material: Si wafer with poly-silicon layer <br/> 3 successive measurements of the roughness ||Repeatability within 0.2%

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