Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions

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-| [[#Results_of_acceptance_test_no._4|4]]||Patterned flat sample of glass||3D profile of pattern etched down in a quartz sample.||Depth within ±1% from a standard profiler measurement and repeatability (3 successive measurements) within 0.1%
+| [[#Results_of_acceptance_test_no._4|4]]||Patterned flat sample of glass||3D profile of pattern etched down in a quartz sample. <br/> Pattern size 20 µm x 20 µm, depth 500 nm||Depth within ±1% from a standard profiler measurement and repeatability (3 successive measurements) within 0.1%
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-| ||||Pattern size 20 µm x 20 µm, depth 500 nm||
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-| [[#Results of acceptance test no. 5|5]]||Flat sample of silicon with thick patterned oxide||Step height of patterned thick (10 µm) oxide on top of a silicon wafer.||Step height must be within ±3% of a SEM profile measurement.
+| [[#Results of acceptance test no. 5|5]]||Flat sample of silicon with thick patterned oxide||Step height of patterned thick (10 µm) oxide on top of a silicon wafer. <br/> 7 µm deep pattern, trench width 6 µm||Step height must be within ±3% of a SEM profile measurement.
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-| [[#Results of acceptance test no. 6|6]]||Flat sample of silicon with thick layer of patterned polymer||Sample material: SU8 on silicon. ||Height 69±2 µm
+| [[#Results of acceptance test no. 6|6]]||Flat sample of silicon with thick layer of patterned polymer||Sample material: SU8 on silicon. <br/> Pillar heights of 69 µm with 25 µm between pillar edges ||Height 69±2 µm
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-| ||||Pillar heights of 69 µm with 25 µm between pillar edges||
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 | [[#Results of acceptance test no. 7|7]]||Free standing structure||Measure bow due to stress of a membrane.||Membrane bow repeatability of 5 successive measurement within 2%