Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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| [[#Results_of_acceptance_test_no._1,_2_and_3|2]]||Patterned flat sample of silicon.||Sample material: Patterned silicon substrate | | [[#Results_of_acceptance_test_no._1,_2_and_3|2]]||Patterned flat sample of silicon.||Sample material: Patterned silicon substrate <br/> Trench depth with aspect ratio 1:11 on a 8 µm wide trench||Depth 91±2 µm | ||
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| [[#Results_of_acceptance_test_no._1,_2_and_3|3]]||Patterned flat sample of silicon||Sample material: Patterned silicon substrate||Depth 85±2 µm | | [[#Results_of_acceptance_test_no._1,_2_and_3|3]]||Patterned flat sample of silicon||Sample material: Patterned silicon substrate||Depth 85±2 µm | ||