Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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*Isotropic etch | *Isotropic etch | ||
*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/ | *Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> (>20) @ 180 C. | ||
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*Isotropic etch | *Isotropic etch | ||