Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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| ||||2.5 µm wide trench in silicon with a depth of 20 µm|| | | ||||2.5 µm wide trench in silicon with a depth of 20 µm|| | ||
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| 10||Film thickness measurement of transparent thin film||Transparent thin film thickness of 28 nm SiO2 on Si||SiO2 thickness 28±1 nm | | [[#Results of acceptance test no. 10|10]]||Film thickness measurement of transparent thin film||Transparent thin film thickness of 28 nm SiO2 on Si||SiO2 thickness 28±1 nm | ||
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| 11||Measurements of multiple stacks||120 nm nitride on 110 nm oxide on a silicon substrate||Within ±2% on each layer from an ellipsometer measurement. | | 11||Measurements of multiple stacks||120 nm nitride on 110 nm oxide on a silicon substrate||Within ±2% on each layer from an ellipsometer measurement. | ||