Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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| ||||7 µm deep pattern, trench width 6 µm|| | | ||||7 µm deep pattern, trench width 6 µm|| | ||
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| 6||Flat sample of silicon with thick layer of patterned polymer||Sample material: SU8 on silicon. ||Height 69±2 µm | | [[#Results of acceptance test no. 6|6]]||Flat sample of silicon with thick layer of patterned polymer||Sample material: SU8 on silicon. ||Height 69±2 µm | ||
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| ||||Pillar heights of 69 µm with 25 µm between pillar edges|| | | ||||Pillar heights of 69 µm with 25 µm between pillar edges|| | ||