Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
No edit summary |
|||
| Line 12: | Line 12: | ||
| align="center" style="background:#f0f0f0;"|'''Acceptance criteria''' | | align="center" style="background:#f0f0f0;"|'''Acceptance criteria''' | ||
|- | |- | ||
| 1||Patterned flat sample of silicon||Sample material: Patterned silicon substrate.||Depth 100±2 µm | | [[#Results_of_acceptance_test_no._1,_2_and_3|1]]||Patterned flat sample of silicon||Sample material: Patterned silicon substrate.||Depth 100±2 µm | ||
|- | |- | ||
| ||||Trench depth with aspect ratio 1:10 on a 10 µm wide trench|| | | ||||Trench depth with aspect ratio 1:10 on a 10 µm wide trench|| | ||