Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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|Etch rate | |Etch rate | ||
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~70-90 nm/min (Thermal oxide) | |||
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*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | ||