Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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*Isotropic etch | *Isotropic etch | ||
*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High | *Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si3N4/Si (>100) and Si3N4/SiO2 (>20) @ 180 C. | ||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||