Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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Sample material: Patterned silicon substrate | Sample material: Patterned silicon substrate | ||
Measurement: Trench depth with aspect ratio 1:10, 1:11 and 1:13 on a 10µm, 8mm and 6.4µm wide trenches respectively | Measurement: Trench depth with aspect ratio 1:10, 1:11 and 1:13 on a 10µm, 8mm and 6.4µm wide trenches respectively | ||
Acceptance criteria:Depth 100±2 µm, 91±2µm and 85±2µm | Acceptance criteria:Depth 100±2 µm, 91±2µm and 85±2µm. The SEM profile images of the three trenches are shown here: | ||
{| border="1" cellspacing="1" cellpadding="2" | |||
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[[image:Sensofar_A1_SEM.jpg|100x100px|thumb|center|A1]] | |||
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[[image:Sensofar_A2_SEM.jpg|100x100px|thumb|center|A2]] | |||
! | |||
[[image:Sensofar_A3_SEM.jpg|100x100px|thumb|center|A3]] | |||
|} | |||
Test no. 1 was done in two ways: | Test no. 1 was done in two ways: | ||
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*Z scan: VSI | *Z scan: VSI | ||
*Light souce: increased gain and contrast | *Light souce: increased gain and contrast | ||
===Results of acceptance test no. 4=== | ===Results of acceptance test no. 4=== | ||