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Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions

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{| {{table} border="1"  
{| {{table} border="1"  
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''Measured depth'''
| align="center" style="background:#f0f0f0;"|'''Measured depth [nm]'''
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| 1||Patterned flat sample of silicon
| 1||337.5
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| 2||336.5
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| 2||Patterned flat sample of silicon.
| 3||334.7
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| 4||335.5
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| 3||Patterned flat sample of silicon
| 5||339.2
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| 6||337.2
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| 4||Patterned flat sample of glass
| 7||334.2
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| 8||335.5
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| 5||Flat sample of silicon with thick patterned oxide
| 9||341.1
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| 10||344.4
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| 6||Flat sample of silicon with thick layer of patterned polymer
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| 7||Free standing structure
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| 8||Stitching of large area
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| 9||Narrow trenches and holes
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| 10||Film thickness measurement of transparent thin film
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| 11||Measurements of multiple stacks
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| 12||Film thickness measurements of transparent films on small structure
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| 13||Roughness repeatability
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