Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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Measurement: Depth of pattern | Measurement: Depth of pattern | ||
Acceptance criteria:Depth within ±1% from a standard profiler measurement and repeatability (3 successive measurements) within 0.1% | Standard profiler measurement:335nm | ||
Acceptance criteria:Depth within ±1% from a standard profiler measurement (331.65nm-338.35nm) and repeatability (3 successive measurements) within 0.1% | |||
It was done using interferometric measurements: | It was done using interferometric measurements: | ||
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It was repeated 10 Time | It was repeated 10 Time | ||
The first measurement is shown [[Media:A4_vsi_50xDI_rep_R001.pdf|here]] | The first measurement is shown [[Media:A4_vsi_50xDI_rep_R001.pdf|here]] | ||
{| {{table} border="1" | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''Measured depth''' | |||
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| 1||Patterned flat sample of silicon | |||
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| 2||Patterned flat sample of silicon. | |||
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| 3||Patterned flat sample of silicon | |||
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| 4||Patterned flat sample of glass | |||
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| 5||Flat sample of silicon with thick patterned oxide | |||
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| 6||Flat sample of silicon with thick layer of patterned polymer | |||
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| 7||Free standing structure | |||
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| 8||Stitching of large area | |||
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| 9||Narrow trenches and holes | |||
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| 10||Film thickness measurement of transparent thin film | |||
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| 11||Measurements of multiple stacks | |||
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| 12||Film thickness measurements of transparent films on small structure | |||
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| 13||Roughness repeatability | |||
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