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Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions

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Measurement: Depth of pattern
Measurement: Depth of pattern


Acceptance criteria:Depth within ±1% from a standard profiler measurement and repeatability (3 successive measurements) within 0.1%  
Standard profiler measurement:335nm
 
Acceptance criteria:Depth within ±1% from a standard profiler measurement (331.65nm-338.35nm) and repeatability (3 successive measurements) within 0.1%  
 


Standard profiler measurement:


It was done using interferometric measurements:
It was done using interferometric measurements:
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It was repeated 10 Time
It was repeated 10 Time
The first measurement is shown [[Media:A4_vsi_50xDI_rep_R001.pdf|here]]
The first measurement is shown [[Media:A4_vsi_50xDI_rep_R001.pdf|here]]
{| {{table} border="1"
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''Measured depth'''
|-
| 1||Patterned flat sample of silicon
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| 2||Patterned flat sample of silicon.
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| 3||Patterned flat sample of silicon
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| 4||Patterned flat sample of glass
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| 5||Flat sample of silicon with thick patterned oxide
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| 6||Flat sample of silicon with thick layer of patterned polymer
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| 7||Free standing structure
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| 8||Stitching of large area
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| 9||Narrow trenches and holes
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| 10||Film thickness measurement of transparent thin film
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| 11||Measurements of multiple stacks
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| 12||Film thickness measurements of transparent films on small structure
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| 13||Roughness repeatability
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|}