Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions
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{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
! | ! | ||
! | ! Settings 1 | ||
! Settings 2 | |||
|- | |- | ||
| Process type | | Process type | ||
|Sputtering | |Sputtering | ||
|Sputtering | |||
|- | |- | ||
| Power | | Power | ||
|130W | |130W | ||
|170W | |||
|- | |- | ||
| Sputter pressure | | Sputter pressure | ||
| 5*10<sup>-2</sup> | | 5*10<sup>-2</sup> | ||
| 5*10<sup>-2</sup> | |||
|- | |- | ||
| Rate | | Rate | ||
| About 0,6Å/s | |||
| About 0,6Å/s | | About 0,6Å/s | ||
|- | |- | ||
|} | |} |
Revision as of 14:17, 15 August 2012
Silicon sputter
Silicon can be deposited in Wordentec.
Parameters
Listed below are tried parameters, that can be used during deposition.
Please don´t use higher power then 180W, since the target then could breake into a lot of small pieces.
Settings 1 | Settings 2 | |
---|---|---|
Process type | Sputtering | Sputtering |
Power | 130W | 170W |
Sputter pressure | 5*10-2 | 5*10-2 |
Rate | About 0,6Å/s | About 0,6Å/s |