Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions

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|-  
|-  
| Power
| Power
|1000W
|130W
|-
| Base pressure
| 6*10<sup>-7</sup>
|-
| Ignition pressure
| 6*10<sup>-3</sup>
|-
|-
| Sputter pressure
| Sputter pressure
| 4*10<sup>-3</sup>
| 5*10<sup>-2</sup>
|-
|-
| Rate
| Rate
| About 0,14Å/s (2 wafers plates, rotating)
| About 0,6Å/s  
|-
|-
|}
|}

Revision as of 13:53, 15 August 2012

Silicon sputter

Silicon can be deposited in Wordentec.


Parameters

Listed below are tried parameters, that can be used during deposition.


Please don´t use higher power then 180W, since the target then could breake into a lot of small pieces.

Setting
Process type Sputtering
Power 130W
Sputter pressure 5*10-2
Rate About 0,6Å/s
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