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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Furnace PolySi
! Furnace PolySi
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
|-  
|-  
| Batch size
| Batch size
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*1-25 wafers of 4"
*1-25 wafers of 4"
*For other sizes ask the furnace team
*For other sizes ask the furnace team
|
.
|
|-
|-
| Pre-clean
| Pre-clean
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|RF Ar clean
|RF Ar clean
|RCA clean for wafers that are not fresh form the box.
|RCA clean for wafers that are not fresh form the box.
|RF Ar clean
|-
|-
| Layer thickness
| Layer thickness
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|10Å to about 3000Å
|10Å to about 3000Å
|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|Thin layers
|-
|-
| Deposition rate
| Deposition rate
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*undoped, boron doped:~100Å/min
*undoped, boron doped:~100Å/min
*Phospher doped:~20Å/min
*Phospher doped:~20Å/min
|
Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|here]]
|-
|-
|Process temperature
|Process temperature
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| Option: heating wafer up to 400 deg C
| Option: heating wafer up to 400 deg C
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
|?
|-
|-
|Step coverage
|Step coverage
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|.
|.
|Good
|Good
|
|-
|-
|Adhesion
|Adhesion
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|Pyrex, fused silica, silicon, metals, oxide, nitride
|Pyrex, fused silica, silicon, metals, oxide, nitride
|Fused silica, Silicon, oxide, nitride
|Fused silica, Silicon, oxide, nitride
|
|-
|-
|Doping facility
|Doping facility
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|None
|None
|Can be doped during deposition with Boron and/or Phosphorous
|Can be doped during deposition with Boron and/or Phosphorous
|
|}
|}


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