Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ||
! Furnace PolySi | ! Furnace PolySi | ||
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | |||
|- | |- | ||
| Batch size | | Batch size | ||
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*1-25 wafers of 4" | *1-25 wafers of 4" | ||
*For other sizes ask the furnace team | *For other sizes ask the furnace team | ||
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|- | |- | ||
| Pre-clean | | Pre-clean | ||
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|RF Ar clean | |RF Ar clean | ||
|RCA clean for wafers that are not fresh form the box. | |RCA clean for wafers that are not fresh form the box. | ||
|RF Ar clean | |||
|- | |- | ||
| Layer thickness | | Layer thickness | ||
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|10Å to about 3000Å | |10Å to about 3000Å | ||
|~50Å to 2µm, if thicker layers are needed please ask the furnace team. | |~50Å to 2µm, if thicker layers are needed please ask the furnace team. | ||
|Thin layers | |||
|- | |- | ||
| Deposition rate | | Deposition rate | ||
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*undoped, boron doped:~100Å/min | *undoped, boron doped:~100Å/min | ||
*Phospher doped:~20Å/min | *Phospher doped:~20Å/min | ||
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Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|here]] | |||
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|Process temperature | |Process temperature | ||
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| Option: heating wafer up to 400 deg C | | Option: heating wafer up to 400 deg C | ||
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | |560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | ||
|? | |||
|- | |- | ||
|Step coverage | |Step coverage | ||
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|. | |. | ||
|Good | |Good | ||
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|- | |- | ||
|Adhesion | |Adhesion | ||
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|Pyrex, fused silica, silicon, metals, oxide, nitride | |Pyrex, fused silica, silicon, metals, oxide, nitride | ||
|Fused silica, Silicon, oxide, nitride | |Fused silica, Silicon, oxide, nitride | ||
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|- | |- | ||
|Doping facility | |Doping facility | ||
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|None | |None | ||
|Can be doped during deposition with Boron and/or Phosphorous | |Can be doped during deposition with Boron and/or Phosphorous | ||
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Revision as of 10:24, 15 August 2012
PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:
| Sputter (Alcatel) | Sputter(PVD co-sputter/evaporation) | Furnace PolySi | Sputter (Wordentec) | ||
|---|---|---|---|---|---|
| Batch size |
|
|
|
. |
|
| Pre-clean | RF Ar clean | RF Ar clean | RCA clean for wafers that are not fresh form the box. | RF Ar clean | |
| Layer thickness | 10Å to 1µm | 10Å to about 3000Å | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. | Thin layers | |
| Deposition rate | 2Å/s to 15Å/s | Dependent on process parameters, but in the order of 1 Å/s. See more here |
|
Dependent on process parameters, but in the order of 1 Å/s. See more here | |
| Process temperature | ? | Option: heating wafer up to 400 deg C | 560 oC (amorph) and 620 oC (poly) | ? | |
| Step coverage | Poor | . | Good | ||
| Adhesion | Bad for pyrex, for other materials we do not know | . | Good for fused silica, silicon oxide, silicon nitride, silicon | ||
| Substrate material allowed | Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape | Pyrex, fused silica, silicon, metals, oxide, nitride | Fused silica, Silicon, oxide, nitride | ||
| Doping facility | None | None | Can be doped during deposition with Boron and/or Phosphorous |
|
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |
Sputtered Silicon in the PVD co-sputter/evaporation
See this page: Si sputter in PVD co-sputter/evaporation