Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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 [[image:DC_nyhed_3.jpg|300x300px|right|thumb|6" LPCVD nitride furnace (new nitride furnace) positioned in cleanroom 14]]
 [[image:Furnace_nitride1.jpg|300x300px|right|thumb|LPCVD nitride furnace (old nitride furnace) positioned in cleanroom 2]]
-At Danchip there are two LPCVD nitride furnaces for deposition of silicon nitride: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and silicon rich (i.e. low stress) nitride on 4" wafers. In LabManager the two furnaces are named "Furnace: LPCVD nitride (6")" and "Furnace: LPCVD nitride", respectively. Please be aware that it is not allowed to deposit silicon rich nitride in the new nitride furnace to avoid problems with particles. Both furnaces are Tempress horizontal furnaces.
+At Danchip there are two LPCVD nitride furnaces for deposition of silicon nitride: A 4" furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or 6" wafers and a 6" furnace (installed in 1995) for deposition of stoichiometric nitride and silicon rich (i.e. low stress) nitride on 4" wafers. In LabManager the two furnaces are named "Furnace: LPCVD nitride (6")" and "Furnace: LPCVD nitride", respectively. Please be aware of that it is not allowed to deposit silicon rich nitride in the 6" nitride furnace to avoid problems with particles. Both furnaces are Tempress horizontal furnaces.
-The LPCVD silicon nitride deposition is a batch process, meaning nitride can be deposited on a batch of up to 17 wafers (in the old nitride furnace) or 25 wafers (in the new nitride furnace) at a time. The deposition takes place at temperatures of 780-845 degrees Celsius and at pressure of 120-200 mTorr. The reactive gases are ammonia (NH<sub>3</sub>) and dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>). The LPCVD nitride has a good step coverage, and the film thickness is very uniform over the wafers.
+The LPCVD silicon nitride deposition is a batch process, where nitride can be deposited on a batch of up to 35 wafers (in the 6" nitride furnace) or 15 wafers (in the 4" nitride furnace) at a time. The deposition takes place at a temperature of 780-845 degrees Celsius and a pressure of 120-200 mTorr. The reactive gases are ammonia (NH<sub>3</sub>) and dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>). The LPCVD nitride has a good step coverage, and the film thickness is very uniform over the wafers.
-On the old nitride furnace there are at moment only a standard recipe for deposition of silicon rich nitride (SRN) on 4" wafers. On the new nitride furnace there are two standard recipes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>), one for 4" wafers and one for 6" wafers.
+At moment there is only a standard recipe for deposition of silicon rich nitride (SRN) on 4" wafers on the 4" nitride furnace. On the 6" nitride furnace there are two standard recipes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>), one for 4" wafers and one for 6" wafers.
 To get information on how to operate the furnaces please read the user manuals which are uploaded to LabManager on the machine page or consult the Furnace group at Danchip (furnace@danchip.dtu.dk).