Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
Appearance
No edit summary |
|||
| Line 66: | Line 66: | ||
==Results== | ==Results== | ||
===Results of acceptance test no. 1=== | ===Results of acceptance test no. 1=== | ||
Sample material: Patterned silicon substrate | |||
Measurement: Trench depth with aspect ratio 1:10 on a 10 µm wide trench | |||
Acceptance criteria:Depth 100±2 µm | |||
It was done in two ways: | |||
#With confocal objective EPI 100x-N | |||
#With Interferometric objective 50X DI | |||