Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions

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=Some general process trends=
=Some general process trends=
This page is supposed to gather some general process trends and good advise for designing IBE recipes.
This page is supposed to gather some general process trends and good advise for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etcing some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ Nanotech''


==Etch rate==
==Etch rate==
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==Etch profile==
==Etch profile==
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|Beam voltage
|Beam voltage
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==Rotation speed==
==Rotation speed==
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Revision as of 12:49, 31 July 2012

Some general process trends

This page is supposed to gather some general process trends and good advise for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etcing some multilayered films. The work has been done by Kristian Hagsted Rasmussen @ Nanotech

Etch rate

Etch rate Parameters
increases with Beam current
increases with Beam voltage
increases with Beam current * Beam voltage
not significantly effected by Stage angle
not significantly effected by Accelerator voltage


Etch profile

Etch profile (goal 90dg) Parameters
improves with Low stage angle (optimum around 5-10 dg)
is effected by Beam current (low I(B)(400mA) better than high I(B)(600mA))
is effected by Accelerator voltage * Stage angle
not significantly effected by Beam voltage


Rotation speed

The rotation is activated to get a good uniformity over the wafer. The minimum number of rotation to get a good uniformity is 100 rotation for the hole etch. the maximum rotation speed is 20rpm. That means that an etch shorter that 5min cannot obtain a very good uniformity.

Etch Length [min] 5 6 7 8 9 10 15 20 25 34 50 100
Minimum rotation speed [rpm] 20 17 15 13 12 10 7 5 4 3 2 1