Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
New page: =Some general process trends= This page is supposed to gather some general process trends and good advise for designing IBE recipes. ==Etch rate== {| border="2" cellspacing="2" cellpaddin... |
No edit summary |
||
| Line 8: | Line 8: | ||
|- | |- | ||
|increases with | |increases with | ||
|Beam current | |Beam current | ||
|- | |- | ||
| Line 17: | Line 16: | ||
|Beam current * Beam voltage | |Beam current * Beam voltage | ||
|- | |- | ||
| | |not significantly effected by | ||
|Stage angle | |Stage angle | ||
|- | |- | ||
| | |not significantly effected by | ||
|Accelerator voltage | |Accelerator voltage | ||
|- | |- | ||
|} | |} | ||
==Etch profile== | |||
{| border="2" cellspacing="2" cellpadding="3" | |||
!Etch profile (goal 90dg) | |||
!Parameters | |||
|- | |||
|improves with | |||
|Low stage angle (optimum around 5-10 dg) | |||
|- | |||
|is effected by | |||
|Beam current (low I(B)(400mA) better than high I(B)(600mA)) | |||
|- | |||
|is effected by | |||
|Accelerator voltage * Stage angle | |||
|- | |||
|not significantly effected by | |||
|Beam voltage | |||
|- | |||