Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
New page: =Some general process trends= This page is supposed to gather some general process trends and good advise for designing IBE recipes. ==Etch rate== {| border="2" cellspacing="2" cellpaddin... |
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| Line 8: | Line 8: | ||
|- | |- | ||
|increases with | |increases with | ||
|Beam current | |Beam current | ||
|- | |- | ||
| Line 17: | Line 16: | ||
|Beam current * Beam voltage | |Beam current * Beam voltage | ||
|- | |- | ||
| | |not significantly effected by | ||
|Stage angle | |Stage angle | ||
|- | |- | ||
| | |not significantly effected by | ||
|Accelerator voltage | |Accelerator voltage | ||
|- | |- | ||
|} | |} | ||
==Etch profile== | |||
{| border="2" cellspacing="2" cellpadding="3" | |||
!Etch profile (goal 90dg) | |||
!Parameters | |||
|- | |||
|improves with | |||
|Low stage angle (optimum around 5-10 dg) | |||
|- | |||
|is effected by | |||
|Beam current (low I(B)(400mA) better than high I(B)(600mA)) | |||
|- | |||
|is effected by | |||
|Accelerator voltage * Stage angle | |||
|- | |||
|not significantly effected by | |||
|Beam voltage | |||
|- | |||
Revision as of 11:47, 31 July 2012
Some general process trends
This page is supposed to gather some general process trends and good advise for designing IBE recipes.
Etch rate
| Etch rate | Parameters |
|---|---|
| increases with | Beam current |
| increases with | Beam voltage |
| increases with | Beam current * Beam voltage |
| not significantly effected by | Stage angle |
| not significantly effected by | Accelerator voltage |
Etch profile
| Etch profile (goal 90dg) | Parameters |
|---|---|
| improves with | Low stage angle (optimum around 5-10 dg) |
| is effected by | Beam current (low I(B)(400mA) better than high I(B)(600mA)) |
| is effected by | Accelerator voltage * Stage angle |
| not significantly effected by | Beam voltage |