Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow: Difference between revisions
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Revision as of 10:53, 31 July 2012
Etch slow
This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.
Parameter | Si etch test1 | Si etch test2 |
---|---|---|
Neutalizer current [mA] | 450 | 250 |
RF Power [W] | 1200 | 1000 |
Beam current [mA] | 400 | 200 |
Beam voltage [V] | 400 | 200 |
Beam accelerator voltage | 400 | 200 |
Ar flow to neutralizer [sccm] | 6.0 | 6.0 |
Ar flow to beam [sccm] | 6.0 | 6.0 |
Rotation speed [rpm] | 20 | 20 |
Stage angle [degrees] | 10 | 10 |
Platen temp. [dg. Celcius] | 15 | 15 |
He cooling pressure [mTorr] | 37.5 | 37.5 |
Results | vvv | vvv |
Etch time [min] | 40 | 40 |
Etch rate in Si [nm/min] | 19.7 | 3.58 |
Total time in Acetone + ultrasound [min] | 17 | 10 |
Was the resist completely removed after acetone + ultrasound? | no | yes |