Revision as of 09:52, 31 July 2012

Etch slow

This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

Parameter	Si etch test1	Si etch test2
Neutalizer current [mA]	450	250
RF Power [W]	1200	1000
Beam current [mA]	400	200
Beam voltage [V]	400	200
Beam accelerator voltage	400	200
Ar flow to neutralizer [sccm]	6.0	6.0
Ar flow to beam [sccm]	6.0	6.0
Rotation speed [rpm]	20	20
Stage angle [degrees]	10	10
Platen temp. [dg. Celcius]	15	15
He cooling pressure [mTorr]	37.5	37.5
Results	vvv
Etch time [min]	40	40
Etch rate in Si [nm/min]	19.7	3.58
Total time in Acetone + ultrasound [min]	17	10
Was the resist completely removed after acetone + ultrasound?	no	yes

@@ Line 5: / Line 5: @@
 {| border="2" cellspacing="2" cellpadding="3"
 !Parameter
-!Si etch first try
+!Si etch test1
+!Si etch test2
 |-
 |Neutalizer current [mA]
 |450
+|250
 |-
 |RF Power [W]
 |1200
+|1000
 |-
 |Beam current [mA]
 |400
+|200
 |-
 |Beam voltage [V]
 |400
+|200
 |-
 |Beam accelerator voltage
 |400
+|200
 |-
 |Ar flow to neutralizer [sccm]
+|6.0
 |6.0
 |-
 |Ar flow to beam [sccm]
+|6.0
 |6.0
 |-
 |Rotation speed [rpm]
+|20
 |20
 |-
 |Stage angle [degrees]
+|10
 |10
 |-
 |Platen temp.  [dg. Celcius]
+|15
 |15
 |-
 |He cooling pressure [mTorr]
+|37.5
 |37.5
 |-
@@ Line 43: / Line 55: @@
 |'''vvv'''
 |-
-|etch time [min]
+|Etch time [min]
+|40
 |40
 |-
 |Etch rate in Si [nm/min]
 |19.7
+|3.58
 |-
 |Total time in Acetone + ultrasound [min]
 |17
+|10
 |-
 |Was the resist completely removed after acetone + ultrasound?
 |no
+|yes
 |-
 |}