Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow: Difference between revisions
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| Line 5: | Line 5: | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Parameter | !Parameter | ||
!Si etch | !Si etch test1 | ||
!Si etch test2 | |||
|- | |- | ||
|Neutalizer current [mA] | |Neutalizer current [mA] | ||
|450 | |450 | ||
|250 | |||
|- | |- | ||
|RF Power [W] | |RF Power [W] | ||
|1200 | |1200 | ||
|1000 | |||
|- | |- | ||
|Beam current [mA] | |Beam current [mA] | ||
|400 | |400 | ||
|200 | |||
|- | |- | ||
|Beam voltage [V] | |Beam voltage [V] | ||
|400 | |400 | ||
|200 | |||
|- | |- | ||
|Beam accelerator voltage | |Beam accelerator voltage | ||
|400 | |400 | ||
|200 | |||
|- | |- | ||
|Ar flow to neutralizer [sccm] | |Ar flow to neutralizer [sccm] | ||
|6.0 | |||
|6.0 | |6.0 | ||
|- | |- | ||
|Ar flow to beam [sccm] | |Ar flow to beam [sccm] | ||
|6.0 | |||
|6.0 | |6.0 | ||
|- | |- | ||
|Rotation speed [rpm] | |Rotation speed [rpm] | ||
|20 | |||
|20 | |20 | ||
|- | |- | ||
|Stage angle [degrees] | |Stage angle [degrees] | ||
|10 | |||
|10 | |10 | ||
|- | |- | ||
|Platen temp. [dg. Celcius] | |Platen temp. [dg. Celcius] | ||
|15 | |||
|15 | |15 | ||
|- | |- | ||
|He cooling pressure [mTorr] | |He cooling pressure [mTorr] | ||
|37.5 | |||
|37.5 | |37.5 | ||
|- | |- | ||
| Line 43: | Line 55: | ||
|'''vvv''' | |'''vvv''' | ||
|- | |- | ||
| | |Etch time [min] | ||
|40 | |||
|40 | |40 | ||
|- | |- | ||
|Etch rate in Si [nm/min] | |Etch rate in Si [nm/min] | ||
|19.7 | |19.7 | ||
|3.58 | |||
|- | |- | ||
|Total time in Acetone + ultrasound [min] | |Total time in Acetone + ultrasound [min] | ||
|17 | |17 | ||
|10 | |||
|- | |- | ||
|Was the resist completely removed after acetone + ultrasound? | |Was the resist completely removed after acetone + ultrasound? | ||
|no | |no | ||
|yes | |||
|- | |- | ||
|} | |} | ||
Revision as of 10:52, 31 July 2012
Etch slow
This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.
| Parameter | Si etch test1 | Si etch test2 |
|---|---|---|
| Neutalizer current [mA] | 450 | 250 |
| RF Power [W] | 1200 | 1000 |
| Beam current [mA] | 400 | 200 |
| Beam voltage [V] | 400 | 200 |
| Beam accelerator voltage | 400 | 200 |
| Ar flow to neutralizer [sccm] | 6.0 | 6.0 |
| Ar flow to beam [sccm] | 6.0 | 6.0 |
| Rotation speed [rpm] | 20 | 20 |
| Stage angle [degrees] | 10 | 10 |
| Platen temp. [dg. Celcius] | 15 | 15 |
| He cooling pressure [mTorr] | 37.5 | 37.5 |
| Results | vvv | |
| Etch time [min] | 40 | 40 |
| Etch rate in Si [nm/min] | 19.7 | 3.58 |
| Total time in Acetone + ultrasound [min] | 17 | 10 |
| Was the resist completely removed after acetone + ultrasound? | no | yes |