Revision as of 09:47, 31 July 2012

Etch slow

This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

Parameter	Si etch first try
Neutalizer current [mA]	450
RF Power [W]	1200
Beam current [mA]	400
Beam voltage [V]	400
Beam accelerator voltage	400
Ar flow to neutralizer [sccm]	6.0
Ar flow to beam [sccm]	6.0
Rotation speed [rpm]	20
Stage angle [degrees]	10
Platen temp. [dg. Celcius]	15
He cooling pressure [mTorr]	37.5
Results	vvv
etch time [min]	40
Etch rate in Si [nm/min]	19.7
Total time in Acetone + ultrasound [min]	17
Was the resist completely removed after acetone + ultrasound?	no

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 This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.
+{| border="2" cellspacing="2" cellpadding="3"
+!Parameter
+!Si etch first try
+|-
+|Neutalizer current [mA]
+|450
+|-
+|RF Power [W]
+|1200
+|-
+|Beam current [mA]
+|400
+|-
+|Beam voltage [V]
+|400
+|-
+|Beam accelerator voltage
+|400
+|-
+|Ar flow to neutralizer [sccm]
+|6.0
+|-
+|Ar flow to beam [sccm]
+|6.0
+|-
+|Rotation speed [rpm]
+|20
+|-
+|Stage angle [degrees]
+|10
+|-
+|Platen temp.  [dg. Celcius]
+|15
+|-
+|He cooling pressure [mTorr]
+|37.5
+|-
+|Results
+|vvv
+|-
+|etch time [min]
+|40
+|-
+|Etch rate in Si [nm/min]
+|19.7
+|-
+|Total time in Acetone + ultrasound [min]
+|17
+|-
+|Was the resist completely removed after acetone + ultrasound?
+|no
+|-
+|}