Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions
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Topographic measurements are measurements were you can measure hight differences on your substrate. If you measure in many spots of | Topographic measurements are measurements were you can measure hight differences on your substrate. If you measure in many spots of the substrate you can get a topographic image of the substrate. | ||
AT DANCHIP we have three systems for topographic measurement: | AT DANCHIP we have three systems for topographic measurement: | ||
*Dektak - ''Profiler for measuring micro structures'' | *Dektak - ''Profiler for measuring micro structures'' | ||
*Optical Profiler (Sensofar) - ''3D Profiler for measuring micro structures'' | |||
*Nanoman - ''AFM for measuring nano structures'' | *Nanoman - ''AFM for measuring nano structures'' | ||
'''High Aspect ratio structures'''<br/> | '''High Aspect ratio structures'''<br/> | ||
The fact that the tips of the profilers and the AFM are shaped like a cone with some tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 <math>\mu</math>m wide trench is etched deeper than approximately 18 <math>\mu</math>m, the tip of the Dektak will not be able to reach the bottom. | The fact that the tips of the Dektak profilers and the AFM are shaped like a cone with some tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 <math>\mu</math>m wide trench is etched deeper than approximately 18 <math>\mu</math>m, the tip of the Dektak will not be able to reach the bottom. The optical profiler uses a light beam that are focused through an objective therefore it is able to measure higher aspect ratios. The aspect ratio is limited by the posibility for the light to reach the bottom and get back to the detector. On some samples we have been able to measure aspect ratios above 1:10. Other wise the solution is to cleave the sample along a line that is perpendicular to the trench and then put it in a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]]. | ||
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{| border="2" cellspacing="0" cellpadding="4" align="center" | {| border="2" cellspacing="0" cellpadding="4" align="center" | ||
! | ! | ||
!Dektak | !Dektak | ||
!Optical Profiler (Sensofar) | |||
!Nanoman | !Nanoman | ||
|- valign="top" | |- valign="top" | ||
|'''General description''' | |'''General description''' | ||
|Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | |Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | ||
|3D Profiler for measuring micro structures. Can do wafer mapping. | |||
|AFM for measuring nanostructures and surface roughness | |AFM for measuring nanostructures and surface roughness | ||
|-valign="top" | |-valign="top" | ||
|'''Substrate size''' | |'''Substrate size''' | ||
| | |up to 8" | ||
| | |Up to more than 6" | ||
|6" or less | |6" or less | ||
|-valign="top" | |-valign="top" | ||
|'''Max. scan range xy''' | |'''Max. scan range xy''' | ||
|Line scan x: 50µm to 200mm | |Line scan x: 50µm to 200mm | ||
|bbb | |||
|90 µm square | |90 µm square | ||
|-valign="top" | |-valign="top" | ||