Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions
New page: ==Test of the deposition rate and film characteristics== ===Recipe=== {| border="2" cellspacing="1" cellpadding="3" align="left" ! !Recipe 1 |- |Platen angle |10 degrees |- |Platen rotat... |
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|Vacc(B) | |Vacc(B) | ||
|400V | |400V | ||
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===Results=== | |||
{| border="2" cellspacing="1" cellpadding="3" align="left" | |||
!Depostion time | |||
!10 min | |||
!30 min | |||
!30 min | |||
|- | |||
|Characterization methode | |||
|FilmTek | |||
|FilmTek | |||
|Ellipsometer 3 angles | |||
|- | |||
|Deposition thickness | |||
|71 nm | |||
|229 nm | |||
|242 nm | |||
|- | |||
|Deposition rate | |||
|7.1 nm/min | |||
|7.6 nm/min | |||
|8.1 nm/min | |||
|- | |||
|Refractive index @632nm | |||
| | |||
n=4.55 <br/> | |||
k=0.826 | |||
| | |||
n=4.916 <br/> | |||
k=0.547 | |||
| | |||
n=4.589 <br/> | |||
k=0.479 | |||
|- | |||
|Refractive index @1000nm <br/> | |||
@950nm using the ellipsometer | |||
| | |||
n=? <br/> | |||
k=? | |||
| | |||
n=4.297 <br/> | |||
k=0.0836 | |||
| | |||
n=4.136 <br/> | |||
k=0.189 | |||
|- | |||
|Roughness | |||
|6.1 nm | |||
|10.4 nm | |||
|1.1 nm | |||
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Revision as of 12:05, 21 March 2012
Test of the deposition rate and film characteristics
Recipe
Recipe 1 | |
---|---|
Platen angle | 10 degrees |
Platen rotation speed | 20rpm |
Ar(N) flow | 4 sccm |
Ar(dep. source) flow | 8 sccm |
I(N) | 320mA |
Power | 700W |
I(B) | 280mA |
V(B) | 1100V |
Vacc(B) | 400V |
Results
Depostion time | 10 min | 30 min | 30 min |
---|---|---|---|
Characterization methode | FilmTek | FilmTek | Ellipsometer 3 angles |
Deposition thickness | 71 nm | 229 nm | 242 nm |
Deposition rate | 7.1 nm/min | 7.6 nm/min | 8.1 nm/min |
Refractive index @632nm |
n=4.55 |
n=4.916 |
n=4.589 |
Refractive index @1000nm @950nm using the ellipsometer |
n=? |
n=4.297 |
n=4.136 |
Roughness | 6.1 nm | 10.4 nm | 1.1 nm |