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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions

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New page: ==Test of the deposition rate and film characteristics== ===Recipe=== {| border="2" cellspacing="1" cellpadding="3" align="left" ! !Recipe 1 |- |Platen angle |10 degrees |- |Platen rotat...
 
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|Vacc(B)
|Vacc(B)
|400V
|400V
|-
|}
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===Results===
{| border="2" cellspacing="1" cellpadding="3" align="left"
!Depostion time
!10 min
!30 min
!30 min
|-
|Characterization methode
|FilmTek
|FilmTek
|Ellipsometer 3 angles
|-
|Deposition thickness
|71 nm
|229 nm
|242 nm
|-
|Deposition rate
|7.1 nm/min
|7.6 nm/min
|8.1 nm/min
|-
|Refractive index @632nm
|
n=4.55 <br/>
k=0.826
|
n=4.916 <br/>
k=0.547
|
n=4.589 <br/>
k=0.479
|-
|Refractive index @1000nm <br/>
@950nm using the ellipsometer
|
n=? <br/>
k=?
|
n=4.297 <br/>
k=0.0836
|
n=4.136 <br/>
k=0.189
|-
|Roughness
|6.1 nm
|10.4 nm
|1.1 nm
|-
|-
|}
|}


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