Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch: Difference between revisions
New page: ==Results from the acceptance test in February 2011== '''Acceptance test for Ti etch:''' {| border="2" cellspacing="0" cellpadding="2" |- !style="background:silver; color:black;" align="l... |
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====Process parameters for the acceptance test==== | |||
{| border="2" cellspacing="2" cellpadding="3" | |||
!Parameter | |||
!Au etch acceptance | |||
|- | |||
|Neutalizer current [mA] | |||
|550 | |||
|- | |||
|RF Power [W] | |||
|1300 | |||
|- | |||
|Beam current [mA] | |||
|500 | |||
|- | |||
|Beam voltage [V] | |||
|600 | |||
|- | |||
|Beam accelerator voltage | |||
|400 | |||
|- | |||
|Ar flow to neutralizer [sccm] | |||
|5.0 | |||
|- | |||
|Ar flow to beam [sccm] | |||
|10.0 | |||
|- | |||
|Rotation speed [rpm] | |||
|20 | |||
|- | |||
|Stage angle [degrees] | |||
|30 | |||
|- | |||
|} | |||