Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch): Difference between revisions

From LabAdviser
BGE (talk | contribs)
BGE (talk | contribs)
Line 12: Line 12:
*[[/Remove resist in the AOE|Remove resist in the AOE]]
*[[/Remove resist in the AOE|Remove resist in the AOE]]
*[[/Quartz etch using AOE|Quartz etch using AOE]]
*[[/Quartz etch using AOE|Quartz etch using AOE]]
*[[/Silicon Nitride Etch using AOE|Silicon Nitride Etch using AOE]]
<br clear="all" />
<br clear="all" />



Revision as of 11:50, 3 January 2012

Etching using the dry etch technique AOE (Advanced oxide etch)

AOE: positioned in cleanroom 2

The AOE can be used for etching silicon oxide, silicon (oxy)nitride and quartz. Look in the manuals for the AOE to see how to operate the machine (you can find the manuals in LabManager on the AOE page).

Currently all training on the AOE should be agreed with Berit Geilman Herstrøm. For training requests e-mail to training@danchip.dtu.dk

Process information


A rough overview of the performance of AOE and some process related parameters

Purpose Dry etch of
  • Silicon oxide
  • Silicon (oxy)nitride
  • Quartz
  • Silicon mask etching
Performance Etch rates

~0.2-0.6 µm/min

Anisotropy
  • Typical profiles: 86-90 degrees
Process parameter range Process pressure
  • ~2-20 mTorr
Gas flows
  • CFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} FFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _8} : 0-40 sccm
  • OFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} : 0-100 sccm
  • CFFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} : 0-100 sccm
  • HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} : 0-30 sccm
  • He: 0-500 sccm
  • NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} : 0-1000 sccm
  • SFFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _6} : 0-300 sccm
Substrates Batch size
  • 1 6" wafer per run (only when the system is setup to 6")
  • 1 4" wafer per run
  • 1 2" wafer per run (needs carrier)
  • Or several smaller pieces (needs carrier)
Substrate material allowed
  • Silicon with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
Possible masking material
  • Photoresist/e-beam resist
  • Silicon/PolySi
  • Aluminium
  • Chromium