Specific Process Knowledge/Characterization/Element analysis: Difference between revisions
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|| The size interaction volume depends on the SEM high voltage and sample density: The higher the SEM high voltage the bigger and deeper the interaction volume. The more dense the material is the smaller is the interaction volume. See section 'Spatial resolution using EDX' below. | || The size interaction volume depends on the SEM high voltage and sample density: The higher the SEM high voltage the bigger and deeper the interaction volume. The more dense the material is the smaller is the interaction volume. See section 'Spatial resolution using EDX' below. | ||
|| The sputtering of the surface makes it possible to perform detailed depth profiling with extremely good sensitivity and depth resolution. | || The sputtering of the surface makes it possible to perform detailed depth profiling with extremely good sensitivity and depth resolution. | ||
|| Very surface sensitive technique. Signal only from the top layer (a few nanometers deep) can be detected. By using the ion beam etch, the composition of deeper lying layers can be probed. | |||
|- | |- | ||
! Detection limit | ! Detection limit | ||
|| Approximately 1 % atomic weight | || Approximately 1 % atomic weight | ||
|| Down to 1 ppb for many elements | || Down to 1 ppb for many elements | ||
|| Approximately 1 % atomic weight | |||
|- | |- | ||
! Speed of measurement | ! Speed of measurement | ||
|| Quite fast and easy | || Quite fast and easy | ||
|| Time consuming | || Time consuming | ||
|| Quite fast and easy | |||
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