Specific Process Knowledge/Characterization/XPS: Difference between revisions
No edit summary |
No edit summary |
||
| Line 20: | Line 20: | ||
===Elemental composition=== | ===Elemental composition=== | ||
[[image:Overview spectra Labadvisor.JPG| | [[image:Overview spectra Labadvisor.JPG|380x380px|left|thumb|XPS spectrum of a sample consisting of the elements silicon, oxygen and carbon.]] | ||
| Line 41: | Line 41: | ||
[[image:Si spectra Labadvisor.JPG| | [[image:Si spectra Labadvisor.JPG|380x380px|left|thumb|XPS Si2p spectrum of Si sample]] | ||
| Line 81: | Line 81: | ||
===Depth profiling=== | ===Depth profiling=== | ||
[[Image:Stochiometry 20110510.JPG| | [[Image:Stochiometry 20110510.JPG|380x380px|left|thumb|Stochiometry as a function of film depth (etch time). The relationship between Cr and Ni is quite stabel through the film. Measurements done with XPS-ThermoScientific ]] | ||
The analysis is made on a choosen spot on the sample surface (detected with the system camera). The technique, is as written above, very surface sensitive and probes only the top nanometers og the sample. | |||
With the ion beam gun on the system a etch of the sample can be done. The system measures the desired spectras, do a etch step and measures the again. A series of etch cycles can be set up, measuring the composition of the sample through at different depths. | |||