Specific Process Knowledge/Characterization/XPS: Difference between revisions
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XPS is a surface sensitive and non destructive technique used for elemental composition | XPS is a surface sensitive and non destructive technique used for analysis of the elemental composition. | ||
Only the outermost atomic layers (some nanometers) are probed, but with an ion etch there is the possibility to probe deeper laying layers. | |||
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[[image:Si spectra Labadvisor.JPG|350x350px|left|thumb|XPS Si2p spectrum of Si sample]] | [[image:Si spectra Labadvisor.JPG|350x350px|left|thumb|XPS Si2p spectrum of Si sample]] | ||
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===Depth profiling=== | ===Depth profiling=== | ||
[[Image:Stochiometry 20110510.JPG|350x350px|left|thumb|Stochiometry as a function of film depth (etch time). The relationship between Cr and Ni is quite stabel through the film. Measurements done with XPS-ThermoScientific ]] | [[Image:Stochiometry 20110510.JPG|350x350px|left|thumb|Stochiometry as a function of film depth (etch time). The relationship between Cr and Ni is quite stabel through the film. Measurements done with XPS-ThermoScientific ]] | ||
The analysis is made on a choosen spot on the sample surface (detected with the system camera). The tehchnique, is as written above, very surface sensitive and probes only the top nanometers og the sample. | |||
==A rough overview of XPS-ThermoScientific characteristics== | ==A rough overview of XPS-ThermoScientific characteristics== | ||