Specific Process Knowledge/Characterization/XPS: Difference between revisions
No edit summary |
No edit summary |
||
Line 1: | Line 1: | ||
===XPS-ThermoScientific=== | |||
A X-ray Photoecectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, and is found in LabManager under the name XPS-ThermoScientific. | A X-ray Photoecectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, and is found in LabManager under the name XPS-ThermoScientific. | ||
===Elemental analysis=== | |||
The XPS technique can be used to do elemental analysis. A comparision about techniques and intsrumens used for elemental analysis at Danchip can be found on the page [[Specific Process Knowledge/Characterization/Element analysis|Element analysis]]. | The XPS technique can be used to do elemental analysis. A comparision about techniques and intsrumens used for elemental analysis at Danchip can be found on the page [[Specific Process Knowledge/Characterization/Element analysis|Element analysis]]. | ||
Revision as of 14:30, 17 October 2011
XPS-ThermoScientific
A X-ray Photoecectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, and is found in LabManager under the name XPS-ThermoScientific.
Elemental analysis
The XPS technique can be used to do elemental analysis. A comparision about techniques and intsrumens used for elemental analysis at Danchip can be found on the page Element analysis.
A rough overview of XPS-ThermoScientific characteristics
Purpose | Chemical analysis |
|
---|---|---|
Performance | Spot size | Can be set between 30µm - 400µm |
Probing depth | Depending on probed element. Max probe depth lies within 10-200 Å. | |
Resolution | Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected. | |
Charge compensation |
Flood gun can be used for charge compensation of non conductive samples | |
Finding structures | Choose measuring spot from camera image (magnified) | |
Depth profiling | Purpose | With ion beam etch the top layer of the material can be removed, to do a depth profiling |
Ion beam size | About 0,3x1 mm | |
Substrates | Substrate size |
Max 60x60 mm |
Substrate thickness |
Max height about 20 mm |