Specific Process Knowledge/Characterization/XPS: Difference between revisions

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===XPS-ThermoScientific===
A X-ray Photoecectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, and is found in LabManager under the name XPS-ThermoScientific.
A X-ray Photoecectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, and is found in LabManager under the name XPS-ThermoScientific.


===Elemental analysis===
The XPS technique can be used to do elemental analysis. A comparision about techniques and intsrumens used for elemental analysis at Danchip can be found on the page [[Specific Process Knowledge/Characterization/Element analysis|Element analysis]].
The XPS technique can be used to do elemental analysis. A comparision about techniques and intsrumens used for elemental analysis at Danchip can be found on the page [[Specific Process Knowledge/Characterization/Element analysis|Element analysis]].



Revision as of 14:30, 17 October 2011

XPS-ThermoScientific

A X-ray Photoecectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, and is found in LabManager under the name XPS-ThermoScientific.

Elemental analysis

The XPS technique can be used to do elemental analysis. A comparision about techniques and intsrumens used for elemental analysis at Danchip can be found on the page Element analysis.


A rough overview of XPS-ThermoScientific characteristics

Purpose Chemical analysis
  • Probing elemental composition
  • Chemical state identification
  • Non destructive technique
  • Surface sensitive
  • Depth profiling possible by ion beam etch of sample
Performance Spot size Can be set between 30µm - 400µm
Probing depth Depending on probed element. Max probe depth lies within 10-200 Å.
Resolution Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected.
Charge compensation

Flood gun can be used for charge compensation of non conductive samples

Finding structures Choose measuring spot from camera image (magnified)
Depth profiling Purpose With ion beam etch the top layer of the material can be removed, to do a depth profiling
Ion beam size About 0,3x1 mm
Substrates Substrate size

Max 60x60 mm

Substrate thickness

Max height about 20 mm