Specific Process Knowledge/Characterization/XPS: Difference between revisions

Revision as of 13:51, 17 October 2011

XPS

See more about elemental analysis on the side Element analysis

Purpose	Chemical analysis	Probing elemental composition Chemical state identification Non destructive technique Surface sensitive Depth profiling possible by ion beam etch of sample
Performance	Spot size	Can be set between 30µm - 400µm
	Probing depth	Depending on probed element. Max probe depth lies within 10-200 Å.
	Resolution	µm
	Charge compensation	1Å, )
	.	µm
Depth profiling	uu	5
Substrates	Substrate size	up
	Substrate thickness	hh

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 * Non destructive technique
 * Surface sensitive
+* Depth profiling possible by ion beam etch of sample
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 !style="background:silver; color:black" align="left"|Performance