Specific Process Knowledge/Characterization/PL mapper

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PhotoLuminescence Mapper: YWafer Mapper RD8-CP Photoluminescence

The PL mapper is used for non-destructive, spatially resolved optical characterization of wafers and thin-film samples. It is primarily used for photoluminescence mapping, but can also perform reflectance measurements using the integrated halogen lamp. The PL mapper is a YWafer Mapper RD8-CP photoluminescence mapping system from YSystems, Japan. It contains an enclosed motorized mapping stage, laser excitation sources at 405, 532 and 980 nm, 310-2160 nm detection range, a halogen lamp for reflectance measurements, an integrated control PC, and safety interlocks. The system is operated using the YWaferController software.

System: YWafer Mapper RD8-CP Photoluminescence Mapping System. Manufacturer: YSystems, Japan. Full configuration: YWAFER-RD8-CP-VISNIR-QE-NIR22-405-532-980-FT-R-HAL. Software: YWaferController for measurements, YWaferViewer for viewing maps and spectra and extracting data.

The user manual and contact information can be found in LabManager.

Performance	Excitation	100 mW @ 405 nm 80 mW @ 532 nm 150 mW @ 980 nm white light source for reflectance measurements (halogen lamp)
	Detection	Silicon detector and IR/InGaAs detector. The system can switch between them to allow detection in the entire range. Silicon detector range: 310-1080 nm. IR/InGaAs detector range: 950-2160 nm.
	Sample/tray sizes	2-inch, 4-inch, 2-inch quarter, 4-inch quarter, 40x40 mm, 76x26 mm (glass microscopy slide) odd-sized samples smaller than 4-inch
	Resolution	Minimum mapping resolution: 0.02 x 0.02 mm. Spot size: Approx. 100 µm at ~1000 nm.
Materials	Allowed substrate materials	III-V Silicon
	Forbidden materials	Do not map any wafers that might leave residues in the machine
Software	YWaferViewer	.ywf map/spectra files can be viewed locally using the publicly available YWaferViewer software Here

For PL measurements, the system can map peak wavelength, peak amplitude, integrated intensity and FWHM. The software can also display PL data on a wavelength or energy scale. For reflectance measurements, the system can map reflectance-related parameters across the selected sample area.

PhotoLuminescence Mapper RPM2000

Positioned in the MOCVD room: F-1, Photo: DTU Nanolab internal

Photoluminescence mapping is a non-contact, non-destructive technique for mapping out uniformity of alloy composition, material quality and defects in substrates and of III-V epiwafers. The Rapid Photoluminiscence Mapper (RPM) is equipped with 3 lasers for PL measurements and a white-light source to map out thickness and reflectance of eg layers, microcavities and VCSELs.

Map of two bonded silicon wafers. Red areas are voids between the wafers, Made by Jens Hemmingsen @ DTU Nanolab

It can also be used to map out voids after silicon wafer-bonding. This is done using the reflectance mapping and is using the fact that silicon is transparent for wavelengths above ~1000nm. A void will therefor change the reflectance in that wavelength range. See datasheet below (Thanks to Jens Hemmingsen for the data).

The user manual and contact information can be found in LabManager.

Performance	Excitation	~100 mW @ 405 nm (~70mW on sample) ~10 mW @ 532 nm ~10 mW @ 980 nm white light source for thickness and reflectance measurements
	Detection	integrated signal: Si and/or InGaAs detector Spectral scan: Si CCD (up to 1100 nm), InGaAs photodiode array (900-1700 nm)
	Gratings	600 lines/mm (single frame: 60 nm @ 400 nm) 300 lines/mm (single frame: 120 nm @ 900 nm) 150 lines/mm (single frame: 270 nm @ 1550 nm)
	Chuck sizes	2", 3" and 4"
	Resolution	Minimum spatial resolution 100 µm spotsize ~100 µm
	Wavelength accuracy	< +/- 1 nm
Materials	Allowed substrate materials	III-V Silicon
	Forbidden materials	Do not map any wafers that might leave residues in the machine
Software	RPM viewer	Only on the local PC at the system