Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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 | valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br /> Boron drive-in'''
 | valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
-| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Gate oxide'''
+| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
-| valign="top" align="center" style="background:#f0f0f0;"|'''C2 <br />Anneal oxide'''
+| valign="top" align="center" style="background:#f0f0f0;"|'''C2 <br />Gate oxide'''
 | valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
 | valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
@@ Line 18: / Line 18: @@
 |-valign="top"
 ! General description
-|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from the B-stack and PECVD1.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing.
+|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Oxidation of gate-oxide and other especially clean oxides.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing.
 |-
 ! Annealing with N<math>_2</math>
-|x||x||x (with special permission)||x||x||x||x||x
+|x||x||x||x (with special permission)||x||x||x||x
 |-
 !Wet annealing with bubler (water steam + N<math>_2</math>)
-|.||.||.||x||x||.||.||.
+|.||.||x||.||x||.||.||.
 |-
 !Process temperature [ <sup>o</sup>C ]
@@ Line 35: / Line 35: @@
 | valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in'''
 | valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
-| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Gate oxide'''
+| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
-| valign="top" align="center" style="background:#f0f0f0;"|'''C2 <br />Anneal oxide'''
+| valign="top" align="center" style="background:#f0f0f0;"|'''C2 <br />Gate oxide'''
 | valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
 | valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
@@ Line 42: / Line 42: @@
 | valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
 |-
-| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x||x||x
+| New clean* Si wafers 4" (6" in C1)||x||x||x||x (with special permission)||x||x||x||x
 |-
-| RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||x||x||x
+| RCA clean** Si wafers with no history of Metals on||x||x||x||x (with special permission)||x||x||x||x
 |-
-| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||.||x||x||x||x||x
+| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||x||.||x||x||x||x
 |-
-| Wafers directly from PECVD1||.||.||.||x||x||x||x||x
+| Wafers directly from PECVD1||.||.||x||.||x||x||x||x
 |-
 | Wafers directly from NIL bonding||.||.||.||.||x||x||x||x