Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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| valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in''' | | valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in''' | | valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br /> | | valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''C2 <br /> | | valign="top" align="center" style="background:#f0f0f0;"|'''C2 <br />Gate oxide''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''D1 <br />APOX''' | | valign="top" align="center" style="background:#f0f0f0;"|'''D1 <br />APOX''' | ||
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|-valign="top" | |-valign="top" | ||
! General description | ! General description | ||
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers | |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation and annealing of wafers from the B-stack and PECVD1.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers.||Oxidation and annealing of wafers from NIL.||Oxidation of very thick oxides||Oxidation and annealing for all materials. | ||
|- | |- | ||
! Dry oxidation | ! Dry oxidation | ||
|x||x||x (with special permission) | |x||x||x||x(with special permission)||x||.||x (after request) | ||
|- | |- | ||
!wet oxidation with torch (H<math>_2</math>+O<math>_2</math>) | !wet oxidation with torch (H<math>_2</math>+O<math>_2</math>) | ||
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!Wet oxidation with bubbler (water steam + N<math>_2</math>) | !Wet oxidation with bubbler (water steam + N<math>_2</math>) | ||
|.||.||x (with special permission) | |.||.||x||x (with special permission)||x||x||. | ||
|- | |- | ||
!Process temperature [ <sup>o</sup>C ] | !Process temperature [ <sup>o</sup>C ] | ||
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!Cleanliness of dry oxide (rated 1-5, 1 is best) | !Cleanliness of dry oxide (rated 1-5, 1 is best) | ||
|2||2|| | |2||2||3||1||4||.||>5 | ||
|- | |- | ||
!Cleanliness of wet oxide (rated 1-4, 1 is best) | !Cleanliness of wet oxide (rated 1-4, 1 is best) | ||
|1||1|| | |1||1||3||2||4||3||. | ||
|-valign="top" | |-valign="top" | ||
! Batch size | ! Batch size | ||
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| align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in''' | | align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in''' | ||
| align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in''' | | align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in''' | ||
| align="center" style="background:#f0f0f0;"|'''C1 <br /> | | align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide''' | ||
| align="center" style="background:#f0f0f0;"|'''C2 <br /> | | align="center" style="background:#f0f0f0;"|'''C2 <br />Gate oxide''' | ||
| align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond''' | | align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond''' | ||
| align="center" style="background:#f0f0f0;"|'''D1 <br />APOX''' | | align="center" style="background:#f0f0f0;"|'''D1 <br />APOX''' | ||
| align="center" style="background:#f0f0f0;"|'''Noble''' | | align="center" style="background:#f0f0f0;"|'''Noble''' | ||
|- | |- | ||
| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission) | | New clean* Si wafers 4" (6" in C1)||x||x||x||x (with special permission)||x||x||x | ||
|- | |- | ||
| RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission) | | RCA clean** Si wafers with no history of Metals on||x||x||x||x (with special permission)||x||.||x | ||
|- | |- | ||
| From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4|| | | From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4||x||.||x||.||x | ||
|- | |- | ||
| Wafers directly from PECVD1||.||.|| | | Wafers directly from PECVD1||.||.||x||.||x||.||x | ||
|- | |- | ||
| Wafers directly from NIL bonding||.||.||.||.||x||.||x | | Wafers directly from NIL bonding||.||.||.||.||x||.||x | ||