Specific Process Knowledge/Lithography/Strip/plasmaAsher05: Difference between revisions
| Line 33: | Line 33: | ||
==Process development sections== | ==Process development sections== | ||
*[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment|Stripping with plasma asher 04 and plasma asher 05]] | *[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment|Stripping with plasma asher 04 and plasma asher 05]] | ||
*[[Specific Process Knowledge/Lithography/Descum/plasmaAsher05| | *[[Specific Process Knowledge/Lithography/Descum/plasmaAsher05|Descumming with plasma asher 4 and plasma asher 5]] | ||
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |CF<sub>4</sub> etch of SiO<sub>2</sub> in Plasma Asher 1]] | *[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |CF<sub>4</sub> etch of SiO<sub>2</sub> in Plasma Asher 1]] | ||
<br clear="all" /> | <br clear="all" /> | ||