Specific Process Knowledge/Lithography/Strip/plasmaAsher05: Difference between revisions
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*Time (full boat): 90 minutes | *Time (full boat): 90 minutes | ||
==Process development sections== | |||
[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment| | *[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment|Process development for plasma asher 04 and plasma asher 05]] | ||
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 1]] | *[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 1]] | ||
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]] | *[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]] | ||
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