Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Leybold|Leybold]])
|-  
|-  
| Batch size
| Batch size
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*Up to 1x4" wafers
*Up to 1x4" wafers
*smaller pieces
*smaller pieces
|
*8x4" wafers or
*5x6" wafers
|-
|-
| Pre-clean
| Pre-clean
|RF Ar clean
|RF Ar clean
|Ar ion bombartment
|-
|-
| Layer thickness
| Layer thickness
|10Å to 1µm  
|10Å to 1µm  
|10Å to 1500Å
|-
|-
| Deposition rate
| Deposition rate
|2Å/s to 15Å/s
|2Å/s to 15Å/s
|1Å/s to 5Å/s
|-
|-
|}
|}

Revision as of 14:45, 15 August 2011

Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
Pre-clean RF Ar clean
Layer thickness 10Å to 1µm
Deposition rate 2Å/s to 15Å/s
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