Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
|- | |- | ||
| Batch size | | Batch size | ||
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*Up to 1x4" wafers | *Up to 1x4" wafers | ||
*smaller pieces | *smaller pieces | ||
|- | |- | ||
| Pre-clean | | Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
| Layer thickness | | Layer thickness | ||
|10Å to 1µm | |10Å to 1µm | ||
|- | |- | ||
| Deposition rate | | Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
|- | |- | ||
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Revision as of 14:43, 15 August 2011
Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | |
|---|---|
| Batch size |
|
| Pre-clean | RF Ar clean |
| Layer thickness | 10Å to 1µm |
| Deposition rate | 2Å/s to 15Å/s |