Specific Process Knowledge/Lithography/Aligners/MAvsMLA: Difference between revisions
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'''Effect of WEC pressure for mask aligner (after WEC head service):''' | '''Effect of WEC pressure for mask aligner (after WEC head service):''' | ||
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|+'''Wafer maps at different WEC pressure for Aligner: MA6-2 (Dose 100mJ/cm<sup>2</sup>)''' | |||
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|[[Image:Map_MA6-2_soft_WEC015.jpg|450px]] | |||
|[[Image:Map_MA6-2_soft_WEC040.jpg|450px]] | |||
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| Soft contact, 0.15bar WEC pressure. <br/>Resolution: 1.17µm average; 0.2µm standard deviation. <br/>Yield at 1.25µm: 89% || Soft contact, 0.40bar WEC pressure. <br/>Resolution: 3.77µm average; 0.7µm standard deviation. <br/>Yield at 2.5µm: 4% | |||
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|[[Image:Map_MA6-2_prox_WEC015.jpg|450px]] | |||
|[[Image:Map_MA6-2_prox_WEC040.jpg|450px]] | |||
|- align="center" | |||
| 10µm proximity, 0.15bar WEC pressure. <br/>Resolution: 1.17µm average; 0.2µm standard deviation. <br/>Yield at 1.25µm: 89% || 10µm proximity, 0.15bar WEC pressure.. <br/>Resolution: 3.77µm average; 0.7µm standard deviation. <br/>Yield at 2.5µm: 4% | |||
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===Resist profile (sidewall angle and linewidth)=== | ===Resist profile (sidewall angle and linewidth)=== | ||