Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions
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*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)]] | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/211nmzep|The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/211nmzep|The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)]] | ||
The exposed area is very small | The exposed area is very small. The 211 nm batch has the same lines distributed in a different way that allows you monitor the progress of the etch in three different durations by cleaving off a piece of the wafer 3 times. | ||
After E-beam exposure the wafers have been developed: N50 for 2 minutes followed by 30 seconds of IPA. | |||
; Substrate mounting | ; Substrate mounting | ||
: | : The 2" wafers are mounted with crystalbond in the center of 4" Si carriers that have an oxide layer facing the plasma. | ||
; Conditioning the process chamber | |||
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