Specific Process Knowledge/Etch/Etching of Bulk Glass

Ething of Glass can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with AOE using Flourine chemistry (only fused silica) or with IBE by sputtering with Ar ions and/or using Flourine chemistry.

At Danchip, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a strong HF-solution (isotropic etch). The set-up consists of a 5L plasic beaker placed on a stirring plate (magnetic stirring) and a special horizontal wafer holder. Normally a 40% pre-mixed HF solution is used.

Masking materials and pre-treatment of the glass surface prior to the deposition of the masking material is a special concern in particular for deep etching (> 10µm).

Due to the high cleanliness fused silica is allowed access to basically all machines meaning that e.g. LPCVD silicon can be deposited as masking material. This is an excellent mask even for quite deep etches.

Regarding borosilicate glass masking is more tricky. The following sequence has been used with some success (using sputtered silicon from the Alcatel):

• Piranha clean
• Bake-out at 250 ^oC (>2.5 hours)
• Plasma ashing
• Sputter-deposit in Alcatel: Power: 550W, Ar-pressure: 10Failed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle ^{-2}} mbar (base pressure: 10Failed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle ^{-6}} mbar)
• Patterning of the silicon using either wet (poly-etch) or dry etching

Process Advice

• Deep etch in Glass

Overview: Wet HF-etch of bulk glass

	Fused silica	Borofloat glass
General description	40% pre-mixed HF	40% pre-mixed HF
Possible masking materials	LPCVD silicon (good adhesion and step coverage)	Sputtered silicon (Alcatel) (bad adhesion and step coverage) We are testing other masks at the moment (ask BGE)
Etch rate	~700 nm/min (patterned silica, slow stirring) ~800 nm/min (non-patterned silica, slow stirring)	~3,9 µm/min
Uniformity	~ 2% (slow stirring, horizontal wafer)
Batch size	1 wafers at a time	1 wafer at a time
Size of substrate	4" wafers	4" wafers
Allowed materials	No restrictions	No restrictions