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Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing: Difference between revisions

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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
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*Pyrolysis of different resists
*Dry oxidation of silicon  
*Dry oxidation of silicon  
*Annealing in N<sub>2</sub>, H<sub>2</sub> or a mixture of the two gasses
*Annealing in N<sub>2</sub>,
*Pyrolysis of different resists
*Annealing in forming gas (up to 5% H<sub>2</sub> mixed with N<sub>2</sub>) - Needs to be tested
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!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
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|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
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*No vacuum: 25 <sup>o</sup>C - 1100 <sup>o</sup>C
*No vacuum: Room temperature - 1100 <sup>o</sup>C - Normally maximum 1050 <sup>o</sup>C allowed
*Vacuum: 25 <sup>o</sup>C - 1050 <sup>o</sup>C  
*Vacuum: Room temperature - 1050 <sup>o</sup>C  
*Standby: Down to room temperature
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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*1 atm
*Atmospheric pressure
*Vacuum down to ~0.1 mbar (depends on gas flow)
*Vacuum down to ~0.1 mbar (gas flow dependent)
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|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gases on the system
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*N<sub>2</sub>: 20 slm
*N<sub>2</sub>: 20 slm
*O<sub>2</sub>: 10 slm
*O<sub>2</sub>: 10 slm
*H<sub>2</sub>: 5 slm (max 2 slm for vacuum processes)
*H<sub>2</sub>: 5 slm - Not allowed
*N<sub>2</sub> mix : 10 slm (for H<sub>2</sub>-N<sub>2</sub> gas mixture)
*N<sub>2</sub> mix : 10 slm (for forming gas H<sub>2</sub>-N<sub>2</sub> gas mixture) - Not tested and not allowed for vacuum processes
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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*1-30 50 mm, 100 mm or 150 mm wafers per run
*1-30 50 mm, 100 mm or 150 mm wafers per run
*1-50 200 mm wafers per run (not possible with all quartz sets)
*Smaller samples (placed horizotally on a Si carrier wafer)
*Smaller samples (placed on Si carrier wafers)
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|style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:LightGrey; color:black"|Substrate materials allowed
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