Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions

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 *[[Specific Process Knowledge/Etch/Etching of Polymer/Etch of Photo Resist using RIE|Etch of Photo Resist using RIE]]
+== Etching of polymers on the ASE ==
+SPTS has provided some recipes for polymer etching on the ASE. They have NOT been tested yet (As of August 2011) and we are therefore very interested in learning whatever experiences you have. Please contact Jonas. The recipes are located in the root folder. Please copy them to your own folder and modify them there for your own purposes as you would with any other recipe.
+{| border="2" cellpadding="2" cellspacing="1"
+|+ '''The polymer recipes'''
+|-
+! rowspan="2" align="center"| Name
+! colspan="2" align="center"| Materials
+! colspan="9" align="center"| Process parameters
+! rowspan="2" align="center"| Comments
+|-
+! Mask
+! Etched
+| O<sub>2</sub>
+| CO<sub>2</sub>
+| SF<sub>6</sub>
+| He/Ar
+| Pressure
+| Temp
+| Coil
+| Platen
+|-
+! novolac
+! Oxide hard mask
+| polyimide/PMMA
+| 0
+| 50
+| 0
+| 0
+| 4
+| 0<sup>o</sup>C
+| 600
+| 150
+| This will etch PMGI, PI, & standard resists.  We've never tried it for PMMA, but it should work
+|-
+|}
+e.g   Novolac polymer, oxide hard mask:    50 CO2, 4 mT, 0 degrees C,   600W, 150W.   This will etch PMGI, PI, & standard resists.  We've never tried it for PMMA, but it should work
+An alternative chemistry for standard resists,PI,  PMMA is 20 O2, 20 He, 3 mT, 600W, 150 W, 10 degrees C.  This will give higher etch rates &  better selectivities, but slightly more bowed profiles
+        BCB:                    7 SF6, 43 O2, 4 mT,  800W, 150W, 20 degrees C.  this is also a good start point for PDMS / Ormocer-type Si/ inorganic-containing polymers.  The SF6 / O2 ratio will depend on the composition of the polymer.